Handout+10_Secondary+Effects+of+the+Actual+MOS+Transistor

Handout+10_Secondary+Effects+of+the+Actual+MOS+Transistor -...

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1 Lecture Secondary Effects of the Dr. Vincent Chang Actual MOS Transistor Copyright The course contents are protected under the copyright laws of the United States and other countries. This course is designated for personal use only and all intellectual property rights of such course contents are reserved by Knowledge Master, Inc. Any distributing, copying or public performance of such course contents, including PowerPoint slides, handout, video and audio sound-track, is Dr. Vincent Chang strictlyp rohibited and may subject theoffender to severe criminal penalties. (Title 17, United State Code, Section 501 & 506) Copyright © by Knowledge Master, Inc.
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2 Outline Intro • Base width modulation of BJT Channel-length modulation effect • Physical explanation • Channel-length modulation parameter Body effect • Measurement of threshold voltage • Experiment • Formula Dr. Vincent Chang Formula • Physical explanation Base-Width Modulation of BJT ) ( CBJ d W CE v CB v ) ( eff B W Base recombination current Cn i C i Dr. Vincent Chang Cn En i i CE v +
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