hw06 - ECE 315 Homework 6 Due 11:15am, October 12, 2007 in...

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 315 Homework 6 Due 11:15am, October 12, 2007 in the drop box 1. (MOSFET subthreshold and saturation behavior) Consider a NMOSFET with a threshold voltage of V th =0.7V, threshold current I th =10 μ A and the substrate factor κ =0.8, (a) If the gate oxide thickness is 10nm, what is the depletion region width in silicon to obtain this substrate factor (hint: the dielectric constant of SiO 2 ε ox at 3.9 and Si si at 11.7 )? (3 pts) (b) Estimate I D at V GS =0.3V and V DS =0.0V. (2 pts) (c) Estimate I D at V GS =0.3V and V DS =1.0V. What is the operating region under this bias? Notice that a rough estimate using the subthreshold slope is sufficient here. (4 pts) (d) To obtain I D =10pA with V DS =0.13V, what will be the required V GS ? (3 pts) 2. (CMOS inverter voltage transfer curve) For a CMOS inverter with a PMOS in the pull-up network and a NMOS in the pull-down network, the output is an open circuit. Assume k p ’W p /L p = k n ’W n /L n =1mA/V 2 , V thn = |V thp | =1V and V An =|V
Background image of page 1
This is the end of the preview. Sign up to access the rest of the document.

This homework help was uploaded on 02/02/2008 for the course ECE 3150 taught by Professor Spencer during the Fall '07 term at Cornell.

Ask a homework question - tutors are online