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Exam3Spring2011 - ECE 3040 Microelectronic Circuits Exam 3...

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Unformatted text preview: ECE 3040 Microelectronic Circuits Exam 3 Apri122, 201] Dr. W. Alan Doolittle Print your name clearly and largely: fa/«iicflhé Instructions: DO NOT TAKE APAR T AN Y PA GES OF THIS EXAM AND SHOWALL WORK ON THE PROVIDED PAGES. Read all the problems carefully and thoroughly before you begin working. You are allowed to use 1 new sheet of notes (1 page front and back), your two note sheets from the previous exams as well as a calculator. There are 100 total points in this exam. Observe the point value of each problem and allocate your time accordingly. SHOW ALL WORK AND CIRCLE YOUR FINAL ANSWER WITH THE PROPER UNITS INDICATED. Write legibly. If I cannot read it, it will be considered a wrong answer. Do all work on the paper provided. Turn in all scratch paper, even if it did not lead to an answer. Report any and all ethics violations to the instructor. Good luck! Sign your name on ONE of the two following cases: I DID NOT observe any ethical violations during this exam: I OESSI'VCE an etliical VIOlathl'l during tlllS exam: First 24% Multiple Choice and True/False (Select the most correct answer) I.) (3-points total) Select the bias mode of the following MOS capacitor which could be used in a MOSFET biased in Saturation. (A) (B) he 5 Mafia? In vertex; 237 Lia ear or“ f Safiumrldfl 2.) ([email protected]/ False: An enhancement mode MOSFET transistor has two competing electric fie s — the Gate field is reSponsible for creating the channel while the drain’s electric field attempts to extract carriers from the channel. 3.) (3-poimél‘éu-9 False: The transistor to the right Is iased in the Iinear/triode region and at low drain voltages the source—drain circuit acts like a resistor. 4.) (3—points) Tru-n the MOSFET transistor to the right, the source and drain have been inverted (converted to p- type) to allow channel current to flow. . \...a-——-—-- 5.) (3-points) Truefin the MOSFET from problem 4, since the channel is pinched off there is no curren I thus the MOSFET is in cutoff. 6.) (3-point.alse: A well designed current amplifier should have a very high output resistance. 7.) ([email protected] While negative feedback is generally needed for an opamp to have stable amp 1 ication, POSITIVE feedback can be used to create an oscillator. 8.) (3-points) @False: Since in a NMOS transistor, the‘source “sources electrons”, the source actua y sinks (accepts) current coming from the drain. 9.) (26-points) For the non—ideal opamp below, the input resistance is l Megaohm, the output resistance is l K ohm and the open loop gain, A0, is 40 dB at DC and has a gain bandwidth product (defined by a single pole) of 5 Hz. When used in the circuit below (with feedback as shown), determine the closed loop input and output resistance and sketch and label the Bode plot showing the voltage gain in all flat regions and the break frequencies (gain in dB vs Log of Fre uenc ). Extra work can be done here, but clearly indicate with problem you are solving. Pulling all the concepts together for a useful purpose: 102 (50-Qointsl Given the following Clemson designed Radio Frequency amplifier circuit, (a) Identify the configuration of the stage (common L (b) What is the AC voltage gain, Vow/Vin? You may assume all capacitors have infinite capacitance and all inductors have infinite inductance. Additionally consider the circuit to be operated at low frequencies Where you can neglect all small signal capacitances. Grading will be based as such: part a=5 points, part b=18 points for DC solution (gate, source and drain voltages along with drain currents), 12 points for the conversion to the small signal model and 15 points for small signal analysis. SHOW/ILL WORK T 0 GET CREDIT! ! .’ f ! 60(9414 my“ 0mm Use the following parameters (note that K, VT and 7t vary with transistor type): For NMOS Depletion Transistors: Kn’=20 uA/V2 VT: ~4.0V l=0.lS V'l Length (L)= 0.18 um Width (W)=10 um For NMOS Enhancement Transistors: K,’=30 uA/v2 VT: +1.5V 2t=0.0 v" Length (L)=O.18 um Width (W)=18 um For PMOS Depletion Transistors: K,’=40 uA/v2 vT= +3.0V 7t=0.0 V" Length (L)=0.36 um Width (W)=10 um For PMOS Enhancement Transistors: Kp‘=50 uA/V2 VT: -0.75V 7L=0.1 V'I Length (L):0.36 um Width (W)=5 um Extra work can be done here, but clearly indicate with problem you are solving. '{fl£ Engaflg $ “me. ‘1ng:,5-(33— )_;§(§§;:9 2-. draw v THsI F} \M 1 ‘4'73 v ,4 VTHS 0V( («3 , —-I’5' $ ifmh Forseib 'A'sfiume L‘,"nec¢rh:. I05 5737'“ng (V635 *- VT): 105 *' groom) (v.55, -1 5') dual VTHG .___ VTHS +ij RTHS ‘1' V65 Extra work can be doue here, but clearly indicate with problem you are solving. VTHS +1375 “THS f" V55 :3 VTHB 105 2: VW Rrkg 2:. 4,”??? - (-‘i 3'3) ‘ V55 Irv“. WWW 9370 W): +7,§3'J‘-V55 2 0,0014%-0'003I4V55 MW .3 -’* I05: 0,0014‘H- - 0- 0001‘! V05 —_—Q,§g~3) (V65: “‘3 V55 “ 9'95.) O:— Mrg V651 - 0,00%“ V55 waoatml _ ,W‘Z" fl" ” T ”HM—nwp—m—Wm. ”3w" Emir/n3 "“3 V“: 3,3“; v a.» 0.55 ‘iv 4VTH",5V’ / )5V : V95 +3395 Rm; +VTH5 :: V05 + Imfi (5370) ”173‘! s Fifi} flfifumfi+ ' ”T, -Vfirif . ”wwwm Extra work can be doue here, but clearly indicate with problem you are solving. I4); I05 ‘-' W -. f“ ' was—m 9* _I__ (“fl—”3"” 3‘ {’Vt’j ‘M’q —... f” =°0 "’ w a *"‘ ...
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