Homework 7
The transistors in this homework are to be implemented in 0.18
µ
m MOS technology so
all dimensions must be a multiple of these numbers (we will approximate 5.04 as 5).
1.
For the basic transistor circuit below, solve for the Qpoint (all three currents and
voltages on the transistor) assuming a V
TNO
=+0.5V, K
n
’=
µ
n
C
ox
=100
µ
A/V
2
,
W=5
µ
m, L=0.18
µ
m, a channel length modulation parameter,
λ
=0.0 V
1
, a body
effect parameter,
γ
=0.0 V
1/2
and
φ
F
=0.4V.
a.
Assuming the transistor is biased in cutoff (neglect leakage currents).
b.
Assuming the transistor is biased in triode/linear.
c.
Assuming the transistor is biased in saturation.
d.
Which assumption is valid?
e.
Repeat part c for
λ
=0.1 V
1
.
f.
For
λ
=0.1 V
1
, (part e answers) determine the voltage gain
VoutAC/VinAC
g.
What is the maximum allowable VoutDC signal swing without distortion.
h.
Note: While I am not asking for it herein, you should be able to determine,
all relevant transistor parameters from their respective material parameters.
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For the circuit below, similar to that from problem 1f, a) calculate the voltage gain.
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 Spring '11
 Doolittle
 Transistor, pmos transistor, length modulation parameter, body effect parameter, basic transistor circuit

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