Homework7

# Homework7 - Homework 7 The transistors in this homework are...

This preview shows pages 1–3. Sign up to view the full content.

Homework 7 The transistors in this homework are to be implemented in 0.18 µ m MOS technology so all dimensions must be a multiple of these numbers (we will approximate 5.04 as 5). 1. For the basic transistor circuit below, solve for the Q-point (all three currents and voltages on the transistor) assuming a V TNO =+0.5V, K n ’= µ n C ox =100 µ A/V 2 , W=5 µ m, L=0.18 µ m, a channel length modulation parameter, λ =0.0 V -1 , a body effect parameter, γ =0.0 V 1/2 and φ F =0.4V. a. Assuming the transistor is biased in cutoff (neglect leakage currents). b. Assuming the transistor is biased in triode/linear. c. Assuming the transistor is biased in saturation. d. Which assumption is valid? e. Repeat part c for λ =0.1 V -1 . f. For λ =0.1 V -1 , (part e answers) determine the voltage gain VoutAC/VinAC g. What is the maximum allowable VoutDC signal swing without distortion. h. Note: While I am not asking for it herein, you should be able to determine, all relevant transistor parameters from their respective material parameters.

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
2. For the circuit below, similar to that from problem 1f, a) calculate the voltage gain.
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 3

Homework7 - Homework 7 The transistors in this homework are...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online