Homework7 - Homework 7 The transistors in this homework are...

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Homework 7 The transistors in this homework are to be implemented in 0.18 µ m MOS technology so all dimensions must be a multiple of these numbers (we will approximate 5.04 as 5). 1. For the basic transistor circuit below, solve for the Q-point (all three currents and voltages on the transistor) assuming a V TNO =+0.5V, K n ’= µ n C ox =100 µ A/V 2 , W=5 µ m, L=0.18 µ m, a channel length modulation parameter, λ =0.0 V -1 , a body effect parameter, γ =0.0 V 1/2 and φ F =0.4V. a. Assuming the transistor is biased in cutoff (neglect leakage currents). b. Assuming the transistor is biased in triode/linear. c. Assuming the transistor is biased in saturation. d. Which assumption is valid? e. Repeat part c for λ =0.1 V -1 . f. For λ =0.1 V -1 , (part e answers) determine the voltage gain VoutAC/VinAC g. What is the maximum allowable VoutDC signal swing without distortion. h. Note: While I am not asking for it herein, you should be able to determine, all relevant transistor parameters from their respective material parameters.
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2. For the circuit below, similar to that from problem 1f, a) calculate the voltage gain.
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Homework7 - Homework 7 The transistors in this homework are...

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