Lecture6-ParameterRelationshipsAndEnergyPositions

Lecture6-ParameterRelationshipsAndEnergyPositions - Lecture...

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ECE 3040 - Dr. Alan Doolittle Georgia Tech Lecture 6 Partial Ionization, Intrinsic Energy and Parameter Relationships Reading: (Cont’d) Pierret 2.5-2.6
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ECE 3040 - Dr. Alan Doolittle Georgia Tech kT E E A A A f A e g N N / ) ( 1 + = kT E E D D D D f e g N N / ) ( 1 + + = Partial Ionization Case g A = 4 for Si, GaAs, Ge and most semiconductors E c E D E v E c E A E v A A N N 88 . 0 = g D = 2 for Si, GaAs, Ge and most semiconductors D D N N 94 . 0 = + A A N N 9998 . 0 = For 10 14 cm -3 B in Si: For 10 17 cm -3 B in Si: For 10 17 cm -3 P in Si:
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ECE 3040 - Dr. Alan Doolittle Georgia Tech Charge Neutrality Partial Ionization Case kT E E D D kT E E A A D f f A e g N n e g N p / ) ( / ) ( 1 1 + = + ( ) ( ) + = d A N n N p kT E E D D kT E E c kT E E A A kT E E v D f c f f A f v e g N e N e g N e N / ) ( / ) ( / ) ( / ) ( 1 1 + = + K K
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ECE 3040 - Dr. Alan Doolittle Georgia Tech What are the Degeneracy Factors The degeneracy factors account for the possibility of
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Lecture6-ParameterRelationshipsAndEnergyPositions - Lecture...

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