Lecture19-BJT Ebers-MollModel

Lecture19-BJT Ebers-MollModel - Lecture 19 Bipolar Junction...

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ECE 3040 - Dr. Alan Doolittle Georgia Tech Lecture 19 Bipolar Junction Transistors (BJT): Part 3 Ebers Moll Large Signal BJT Model, Using CVD model to solve for DC bias point Reading: Pierret 11.1
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ECE 3040 - Dr. Alan Doolittle Georgia Tech Bipolar Junction Transistor (BJT) Quantitative Solution Insight into transistor performance If L B >>W (most of the minority carriers make it across the base), DC DC B E E E B B E E B B E DC DC DC E E B B E B E E B B E DC WN D N L D L W N L D WN D and N L D WN D L W N L D WN D α β = + = + = + + + = 1 2 1 1 1 1 1 2 1 1 1 2 2
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Georgia Tech = = 1 1 1 1 0 0 T CB T EB T CB T EB V V R V V C V V V V F E e I e A I e A e I I + = + = 1 sinh cosh 1 sinh 1 1 sinh 1 1 sinh cosh T CB T EB T CB T EB V V B B B Bo B Co C C V V B B Bo B C V V B B Bo B V V B B B Bo B Eo E E E e L W L W L p D n L D qA e L W L p D qA I e L W L p D qA e L W L W L p D n L D qA I I F0 I R0 A A * Development of the Large Signal Model of a BJT (Ebers-Moll Model)
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Lecture19-BJT Ebers-MollModel - Lecture 19 Bipolar Junction...

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