Lecture24-MOS Transistors

Lecture24-MOS Transistors - Lecture 24 MOSFET Basics...

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ECE 3040 - Dr. Alan Doolittle Georgia Tech Lecture 24 MOSFET Basics (Understanding with no math) Reading: Pierret 17.1-17.2 and Jaeger 4.1-4.10 and Notes
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ECE 3040 - Dr. Alan Doolittle Georgia Tech Flow of current from “Source” to “Drain” is controlled by the “Gate” voltage. Control by the Gate voltage is achieved by modulating the conductivity of the semiconductor region just below the gate. This region is known as the channel MOS Transistor Qualitative Description
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ECE 3040 - Dr. Alan Doolittle Georgia Tech G S D B V GS V BS V DS + + + - n-channel MOS Transistor G=Gate, D=Drain, S=Source, B=Body (substrate, but to avoid confusion with substrate, B is used) G S D B V SG V SB V SD - - - + p-channel MOS Transistor Note: All voltages are shown in their “positive “ direction. Obviously, V YX =-V XY for any voltage MOS Transistor Qualitative Description
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ECE 3040 - Dr. Alan Doolittle Georgia Tech P-type MOS Transistor Qualitative Description Assume an n-channel (receives it’s name from the “type” of channel present when current is flowing) device with its source and substrate grounded (i. e., V S =V B =0 V). For any value of V DS : •when V GS <0 (accumulation), the source to drain path consists of two back to back diodes. One of these diodes is always reverse biased regardless of the drain voltage polarity.
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This note was uploaded on 08/23/2011 for the course ECE 3040 taught by Professor Doolittle during the Spring '11 term at University of Florida.

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Lecture24-MOS Transistors - Lecture 24 MOSFET Basics...

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