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Lecture25-MOSTransQuantitativeId-Vd-Vg

Lecture25-MOSTransQuantitativeId-Vd-Vg - Lecture 25 MOSFET...

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ECE 3040 - Dr. Alan Doolittle Georgia Tech Lecture 25 MOSFET Basics (Understanding with Math) Reading: Pierret 17.1-17.2 and Jaeger 4.1-4.10 and Notes
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ECE 3040 - Dr. Alan Doolittle Georgia Tech MOS Transistor I-V Derivation With our expression relating the Gate voltage to the surface potential and the fact that S =2 F we can determine the value of the threshold voltage area unit per e capacitanc oxide the is where, devices) channel - p (for 2 2 2 devices) channel - n (for 2 2 2 ox ox ox F S D ox S F T F S A ox S F T x C qN C V qN C V Where we have made use of the use of the expression, o S S K
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