Lecture26-MOSTranSmallSigModelAmplifiers

Lecture26-MOSTranSmallSigModelAmplifiers - MOSFET Small...

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ECE 3040 - Dr. Alan Doolittle Georgia Tech MOSFET Small Signal Model and Analysis •Just as we did with the BJT, we can consider the MOSFET amplifier analysis in two parts: •Find the DC operating point •Then determine the amplifier output parameters for very small input signals.
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ECE 3040 - Dr. Alan Doolittle Georgia Tech MOSFET Small Signal Model and Analysis Linear Two Port Network + V 1 - i 1 i 2 + V 2 - I 1 =y 11 V 1 + y 12 V 2 I 2 =y 21 V 1 + y 22 V 2 General “y-parameter” Network Non-Linear I-V relationship (BJT, MOSFET, etc…) + V 1 - i 1 i 2 + V 2 - Linearize over “small signal range” I GS =y 11 V GS + y 12 V DS I DS =y 21 V GS + y 22 V DS MOSFET “y-parameter” Network v GS v DS i DS i GS
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ECE 3040 - Dr. Alan Doolittle Georgia Tech I GS =y 11 V GS + y 12 V DS I DS =y 21 V GS + y 22 V DS [ [ [ I GS y 11 y 12 V GS I DS y 21 y 22 V DS [ = Q V Q V i j ij DS GS V I y , , , = Derivative of current-voltage equation evaluated at the Quiescent Point MOSFET Small Signal Model and Analysis ( 29 [ ] ( 29 TN GS DS DS TN GS n DS V V V for V V V K I - + - = l 1 2 2 MOSFET Amplifiers are biased into Saturation (or Active Mode) 1.) Input Conductance 2.) Output Conductance 3.) Transconductance 0 0 0 0 0 12 11 = = = = = y and y V I and V I I DS GS GS GS GS ( 29 2 22 2 T GS n DS DS V V K y V I - = = l ( 29( 29 DS T GS n GS DS V V V K y V I l + - = = 1 21
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ECE 3040 - Dr. Alan Doolittle
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This note was uploaded on 08/23/2011 for the course ECE 3040 taught by Professor Doolittle during the Spring '11 term at University of Florida.

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Lecture26-MOSTranSmallSigModelAmplifiers - MOSFET Small...

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