2_PCM 3080 Raymond Chian Wednesday

2_PCM 3080 Raymond Chian Wednesday - PCM PhaseChangeMemory...

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PCM Phase Change Memory
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Theory of Operation Uses states of materials to represent bits instead of elections Amorphous = “0” Crystalline = “1” Other traits of the materials change with the states such as : Resistivity Reflectivity
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Type of Material Chalcogenide glass Ge 2 Sb 2 Te 5 (GST) AgLnSbTe, InSe, SbSe, InSbSe Structure Sample Properties Amorphous Short range atomic Order High reflectivity High resistivity Polycrystalline Long range atomic Order Low reflectivity Low resistivity
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+ R=High R=Low
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Rewritable DVDs Uses optical lasers to change state of alloy Uses the change in its reflectivity to measure bits
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Phase Change Memory May replace flash and RAM Uses small “heaters” to change the state of alloy Different temperatures causes different states
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Write and Read Bit alterable Uses Joule heating(resistive heating) Uses a intense voltage pulse to control heat Write time is limited by crystalline formation
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Tech.

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2_PCM 3080 Raymond Chian Wednesday - PCM PhaseChangeMemory...

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