4-Feaster-LATE-Semiconductors in Wireless Communication Devices

4-Feaster-LATE-Semiconductors in Wireless Communication Devices

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Semiconductors in Wireless Communication Devices By: William Feaster ECE 3080 November 30, 2004
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Overview General look at the active devices used in the field Role currently played in society Conclusions Questions
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A place for everything? Traditionally in mobile devices, GaAs 3-5 compound, picked over Si Recently, SiGe 4-4 compound, has received a lot of attention in this field CMOS technology introduced as being cheaper InGaP introduced as having the best process technology in the 5 GHz area
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Gallium Arsenide Primarily used over Si because better electron mobility and its ability to handle higher frequencies Three main components of a GaAs chip are: MESFET (Metal Semiconductor Field Effect Transistor), pHEMT (pseudomorphic High Electron Mobility Transistor),
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Unformatted text preview: HBT ( Heterojunction Bipolar Transistor) MESFET pHEMT HBT Advantages of Silicon Germanium Six to eight inch wafers can be produced at a low cost as opposed to the typical GaAs size of 4 to 6 inch wafers Operate at high frequencies with high power efficiencies SiGe Semicondutor Material Properties Process technologies in Cell phone components Cell phone components Economic Impact In 2001, Wireless Semiconductors generated 15.35 billion dollars of revenue Conclusions Improving technology making wireless a more realistic option Current technology not quite ready to make the impact on society that is possible Future generations bring hopes of total and unlimited mobility Questions???...
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Institute of Technology.

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4-Feaster-LATE-Semiconductors in Wireless Communication Devices

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