7-Ehren Bendler sram - Static Random Access Memory Ehren...

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Static Random Access Memory Ehren Bendler ECE 3080 April 2008
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Overview z What is SRAM? z What is SRAM used for? z Where is SRAM going in the future?
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What is SRAM? z SRAM occupies a middle ground between DRAM and the various types of ROM z Does not need to be refreshed constantly like DRAM, is also faster than DRAM z Will not hold data without power, unlike ROM At least not for more than 100s of ms Data loss rate is inversely related to temperature and current z The most common form today uses 6 MOSFETs
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SRAM in Silicon z This cell (outlined area) was made on intel's 45nm process z It has an area of 0.346 um^2 z The latest 32nm processes give SRAM cells with an area of 0.15 um^2
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Labeled 45nm SRAM Cell
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Static Noise Margin z Measures the voltage needed to make the cell change state z Inversely related to cell size z For a 6T SRAM cell, the SNM is given by:
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.. z That equation is not very useful for modern and future SRAM The paper it's from is from 1987, when 3V
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Institute of Technology.

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7-Ehren Bendler sram - Static Random Access Memory Ehren...

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