8_Graphene3080 Joe Gonzalez

8_Graphene3080 Joe Gonzalez - Graphene Electronics ECE3080...

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Graphene Electronics ECE 3080 Joe Gonzalez
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Objectives Overview Issues Mobility Issues Integration Contacts Present Graphene Transistors Critical Issues Conclusions/Future 2
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Overview Processing Methods Exfoliated Graphene Epitaxial Graphene Graphene on Si Graphene on SiC 3
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Exfoliated Graphene Uses cohesive tape to split graphite crystals into smaller segments Dry deposition
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Epitaxial Growth on Si Two step process Epitaxial growth of SiC on Si (CVD) Sacrificial Layer Thermal decomposition of SiC to Graphene http://arxiv.org/ftp/arxiv/papers/1001/1001.4955.pdf 5
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GNRFET Graphene Nanoribbon FET Bandgap attainable via decreasing nanoribbon width Mobility tradeoff 6
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Issues The critical issues for graphene include the ability to: 1. Achieve a high mobility on a silicon compatible substrate 2. Form reproducible low resistance contacts to graphene (contacting without etching through a monolayer film) 3. Integration, doping, and compatibility with CMOS From International Technology Roadmap for Semiconductors, 2009 Edition, Emerging Research Materials 7
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Mobility Primer Unique bond structure 2D macromolecule Carriers behave like Dirac fermions m * 0 E g = 0 Weak electron phonon interaction 8 http://www.andrew.cmu.edu/user/feenstra/graphene/
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Exfoliated vs. Epitaxial Mechanically exfoliated Monolayers Intrinsic mobility > 200,000 cm 2 /V · s Epitaxial Multilayers
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Institute of Technology.

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8_Graphene3080 Joe Gonzalez - Graphene Electronics ECE3080...

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