9-Noah Allen-Floating Gate Transistor

9-Noah Allen-Floating Gate Transistor - Floating Gate...

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4/21/2008 1 Floating Gate Transistor Floating Gate Transistor Noah Allen ECE 3080 Presentation
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4/21/2008 2 Floating Gate Transistors Floating Gate Transistors z Structure z Function analysis z “Readable” and “Writable” z Use in nonvolatile memory
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4/21/2008 3 Introduction Introduction z Works the same way that MOSFET works z Has extra “floating gate” z Stores charge on the floating gate z EPROM and EEPROM
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4/21/2008 4 History History z Founded by Kahng and Sze (Bell Labs) 1967 z EPROM invented by Don Fohman 1971 z EEPROM invented by George Perlegos (Intel) 1983 z Beginning to move out of memory uses toward neuromorphic systems
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4/21/2008 5 FGMOS Analysis FGMOS Analysis
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4/21/2008 6 FGMOS: Programming FGMOS: Programming z Fowler-Nordheim (FN) Tunneling Silicon Dioxide layer act as a boundary Large voltage is applied to the Control Gate Voltage create a high electric field Electrons tunnel through thin SiO 2 barrier Thin: 5-12nm Thick: 25- 45nm
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4/21/2008 7 FGMOS: Programming FGMOS: Programming Fowler-Nordheim (FN) Tunneling Band Diagram Normal Band Diagram
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Institute of Technology.

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9-Noah Allen-Floating Gate Transistor - Floating Gate...

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