10-Manning-Germanium-on-Insulator (GeOI)

10-Manning-Germanium-on-Insulator (GeOI) -...

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Unformatted text preview: Germanium-on-Insulator (GeOI) Technology by Matthew Manning Basic MOSFET Two factors that hinder MOSFET operational speed: Parasitic capacitance Electron Mobility Typical solutions: The scaling down of device size to reduce capacitance The use of different materials Whats the problem? MOSFET Capacitances One Solution: Silicon-on-Insulator A wafer is created with a buried oxide layer. The buried oxide or BOX layer is typically created by forcefully implanting oxygen into a slab of silicon, annealing to create SiO 2 , and then thickening the top Si layer through epitaxial growth. This process is known as SIMOX. A second method involves growing a SiO 2 layer on top of a slab of silicon and then attaching a second slab of Si to the oxide. This process is known as bonded SOI or BESOI. SOI (continued) Silicon-on-insulator benefits: Decreases parasitic capacitance Reduces leakage Completely eliminates CMOS latch-up SOI has been used in PCs, servers, optical electronics, and automotive electronics to name a few. The Next Step: GeOI...
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10-Manning-Germanium-on-Insulator (GeOI) -...

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