11-Stephen Nowell MESFET

11-Stephen Nowell MESFET - MESFET (Metal Semiconductor...

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MESFET (Metal Semiconductor Field Effect Transistor) Stephen Nowell gth253a ECE 3080 Spring 2008 W.Alan Doolittle Image from E.F.Schubert, Rensselaer Polytechnic Institute, 2003
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- MOSFETs form a channel with inversion and have an oxide gate. - JFETs deplete the channel to cut off current flow. Quick Comparison to Other FETS Mosfet image from http://info.tuwien.ac.at/theochem/si-srtio3_interface/mosfet.jpg and Jfet image from http://www.onr.navy.mil/sci_tech/31/312/ncsr/devices/jfet.asp
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- MESFETs (MEtal Semiconductor Field Effect Transistor) have a metal gate, not oxide, and work similar to JFETs by pinching off the conducting channel. The MESFET Image from Digital Circuits High Speed, prentice hall 2005
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Bias on the MESFET - With no voltage’s applied electrons are not inhibited or motivated to flow. - No voltage across source and drain, but reverse bias on the gate. With enough reverse bias channel is pinched and no electrons can flow. - Voltage across the drain and source create a current and cause the depletion region to pinch off sooner on the drain side. Image from http://www.ecse.rpi.edu/~schubert/Course-ECSE-6290%20SDM-2/1%20JFETs%20and%20MESFETs.pdf
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Calculations -V T is the threshold voltage required to fully deplete the doped channel layer. -V P is the pinch-off voltage. - is the built in potential. Image of MOSFET and Images of Calculations from http://ece-www.colorado.edu/~bart/book/book/chapter3/pdf/ch3_6.pdf
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Calculations cont. - Current density in the doped layer - Current in the doped layer - Depletion layer width of the depletion region. Image of MOSFET and Images of Calculations from http://ece-www.colorado.edu/~bart/book/book/chapter3/pdf/ch3_6.pdf
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Calculations cont. - Integrating from the source to the drain we can calculate the
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Tech.

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11-Stephen Nowell MESFET - MESFET (Metal Semiconductor...

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