11_Spin Torque Random Access Memory 3080 Erik Ronshagen

11_Spin Torque - SPIN-TORQUE TRANSFER RANDOM ACCESS MEMORY Erik Ronshagen ECE3080 Spring 2011 WHAT IS STTRAM A type of Magnetic RAM(MRAM Advantages

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Erik Ronshagen ECE3080 Spring 2011 SPIN-TORQUE TRANSFER RANDOM ACCESS MEMORY
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WHAT IS STTRAM? A type of Magnetic RAM (MRAM) Advantages over traditional memory types: Non-volatile MRAM Speed of SRAM High density (Single Transistor Cell) Scalable beyond 90nm node Zero leakage power
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CELL STRUCTURE Magnetic Tunnel Junction (MTJ) Two ferromagnetic layers separated by an insulating layer Single n-type MOSFET transistor Bit line, Source line, and Word line Cell bit is “stored” by the resistance of the MTJ
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MAGNETIC TUNNEL JUNCTION Core of the STTRAM cell Two ferromagnets (FM) separated by a thin insulating layer Usually MgO A few nanometers thick Electrons can tunnel through this barrier One FM layer has fixed magnetization The other FM layer is “free” and can have its magnetization changed by spin-polarized current This changes the resistance through the MTJ
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SPIN-POLARIZATION Current is passed through a thick magnetic layer, and the spin of the carrier electrons is polarized to a single spin state As the electrons move through the fixed layer, their magnetic moments become aligned to that of the fixed layer
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Institute of Technology.

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11_Spin Torque - SPIN-TORQUE TRANSFER RANDOM ACCESS MEMORY Erik Ronshagen ECE3080 Spring 2011 WHAT IS STTRAM A type of Magnetic RAM(MRAM Advantages

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