15-Tan-Insulated Gate Bipolar Transistor (IGBT)

15-Tan-Insulated Gate Bipolar Transistor (IGBT) - Insulated...

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Insulated Gate Bipolar Transistor (IGBT) Stephen Tan ECE3080 Fall 2004
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Similarities to Other Power Transistors Bipolar transistor ON state voltage is low IGBT has no integral reverse diode IGBT has very little reverse voltage MOSFET IGBT is voltage controlled Switching control requirements are similar IGBT has high switching speeds
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Equivalent Circuit Fig 4: Equivalent circuit for the IGBT. [2]
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Equivalent Circuit Capacitances cause charging and discharging currents to flow in gate terminal during switching, which affect the gate control design. Capacitance specifications for a device include: – Ciss – (C GS + C GC ) input capacitance of gate with the source and drain – Coss – (C DE + C GC ) output capacitance with gate tied to source – Crss – (C GC ) reverse transfer capacitance
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IGBT Structure An inversion layer can be formed under the gate by applying the correct voltage to the gate contact as with a MOSFET. As can be seen from the structure shown
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15-Tan-Insulated Gate Bipolar Transistor (IGBT) - Insulated...

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