17-Ogra-Wide_band_gap_semiconductors

17-Ogra-Wide_band_gap_semiconductors - Wide Band-Gap...

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Wide Band-Gap Semiconductors Rohit Ogra ECE 3080 - Fall 2004
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Silicon - Reaching it’s Limitation For over 30 years, Si has been the ubiquitous semiconductor material Si usage - reaching a saturation point Wide Band-Gap semiconductors Definition: E g > 2.0 eV Si SiC GaN Band-Gap 1.1 2.9 3.4 (eV at 300K)
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Advantages of WBG Ability to operate under elevated temperatures Superior Electrical Properties High breakdown field High Saturated Drift Velocity Low Electron and Hole Mobility Short carrier lifetimes & small drift regions => Short recovery time
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Advantages of WBG (contd.) Superior Electrical Properties (contd.) High reverse voltage blocking capability Higher band-gap => lower intrinsic carrier concentration Smaller Size and Cost
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A Comparison Si SiC GaN Band-gap (eV at 300K) 1.1 2.9 3.4 Max. Operating Temperature (K) 425 > 900 >800 Breakdown Field (10^5) 6 35 35 Electron Mobility (cm^2/V.s) 1350 800 1000 Hole Mobility (cm^2/V.s) 450 120 300 Breakdown Voltage (10^6 V/cm) 0.3 4 5 Saturated Velocity (10^7) 1 2 1.5
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Institute of Technology.

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17-Ogra-Wide_band_gap_semiconductors - Wide Band-Gap...

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