ECE3080-L-1-Introduction to Electronic Materials Pierret Chap 1 and 2

ECE3080-L-1-Introduction to Electronic Materials Pierret Chap 1 and 2

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Unformatted text preview: ECE 3080 - Dr. Alan Doolittle Georgia Tech Lecture 1 Introduction to Semiconductor Devices Reading: Notes and Anderson 2 Chapters 1.1-1.3, 1.7-1.9 ECE 3080 - Dr. Alan Doolittle Georgia Tech Atoms to Operational Amplifiers •The goal of this course is to teach the fundamentals of non-linear circuit elements including diodes, LEDs, LASER diodes, transistors (BJT and FET) , and advanced device concepts such as microwave compound semiconductors and state of the art devices. •Due to the diverse coverage from various professors for ECE3040, you will repeat (for some) some of the material from 3040. Specifically, you will learn about the fundamentals of electron movement in semiconductor materials and develop this basic knowledge of how we can construct devices from these materials that can control the flow of electrons and light in useful ways. ECE 3080 - Dr. Alan Doolittle Georgia Tech Market Study Silicon is and will for a very long time be the dominant material used for electronics. However, MANY up and coming materials are slowly eating into silicon’s dominance. Organic and compound semiconductors Compound semiconductors Compound semiconductors ECE 3080 - Dr. Alan Doolittle Georgia Tech Devices we will study Bold indicates devices covered in depth in ECE 3040 P-N diode , heterojunction diodes, ballistic diodes, Schottky barrier diodes, Metal-Semiconductor Contacts, LEDs, Lasers, Solar Cells, Photodetectors, BJT , HBT, MOSFET , MESFET, JFET, Polarization Based Devices (III-Nitrides HEMTs and Ferroelectric transistors), CCD, Microwave transistors, power transistors, organic semiconductors ECE 3080 - Dr. Alan Doolittle Georgia Tech Modern amplifiers consist of extremely small devices Transistors in the above image are only a few microns ( µ m or 1e-6 meters) on a side. Modern devices have lateral dimensions that are only fractions of a micron (~0.1 µ m) and vertical dimensions that may be only a few atoms tall. ECE 3080 - Dr. Alan Doolittle Georgia Tech Intel Develops World's Smallest, Fastest CMOS Transistor SANTA CLARA, Calif., Dec. 11, 2000 - Intel Corporation researchers have achieved a significant breakthrough by building the world's smallest and fastest CMOS transistor. This breakthrough will allow Intel within the next five to 10 years to build microprocessors containing more than 400 million transistors, running at 10 gigahertz (10 billion cycles per second) and operating at less than one volt. The transistors feature structures just 30 nanometers in size and three atomic layers thick . (Note: A nanometer is one- billionth of a meter). Smaller transistors are faster, and fast transistors are the key building block for fast microprocessors, the brains of computers and countless other smart devices....
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This note was uploaded on 08/23/2011 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Tech.

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ECE3080-L-1-Introduction to Electronic Materials Pierret Chap 1 and 2

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