ECE3080-L-3b-Doping

ECE3080-L-3b-Doping - ECE 3080 - Dr. Alan Doolittle Georgia...

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Unformatted text preview: ECE 3080 - Dr. Alan Doolittle Georgia Tech Lecture 3b Bonding Model and Dopants Reading: (Contd) Notes and Anderson 2 sections 2.3-2.7 ECE 3080 - Dr. Alan Doolittle Georgia Tech The need for more control over carrier concentration Without help the total number of carriers (electrons and holes) is limited to 2n i . For most materials, this is not that much, and leads to very high resistance and few useful applications. We need to add carriers by modifying the crystal. This process is known as doping the crystal. ECE 3080 - Dr. Alan Doolittle Georgia Tech Regarding Doping, ... ECE 3080 - Dr. Alan Doolittle Georgia Tech Example: P, As, Sb in Si Extrinsic, (or doped material): Concept of a Donor adding extra electrons ECE 3080 - Dr. Alan Doolittle Georgia Tech Concept of a Donor adding extra electrons 1 1 . 1 ) 4 ( 2 2 * 2 4 * = = n for eV E m m n q m E H R o n o R n electron for Binding h Use the Hydrogen Atomic Energy levels to approximate the energy required to free an electron on a donor. Replace dielectric constant with that of the semiconductor Replace mass with that of the semiconductor ... 3 , 2 , 1 , arg 2 / 2 / tan , 6 . 13 ) 4 ( 2 2 2 4 = = =...
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ECE3080-L-3b-Doping - ECE 3080 - Dr. Alan Doolittle Georgia...

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