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Unformatted text preview: The profile must have a concentration less than 1e15 at depths less than 100 angstroms and deeper than 1700 angstroms. The projected range can be approximated as, and the straggle is described as, Using a simple gaussian approximation, determine the best combination of peak concentrations and implant energies to achieve this profile. Plot the resulting profile. Your answer may not be unique. 3.) During a subsequent anneal, the profile is changed. If the wafer surfaces are assumed to be at infinity relative to the peak, a simple approximation to the new profile is given by replacing the straggle according to, where D is the diffusion coefficient and t is time. Using neutral vacancy controlled diffusion data from table 3.2 in your book, plot the new profile after (A) a 1000 degree C, 45 minute furnace anneal and (B) after a RTP anneal at 1100 degrees C for 10 seconds. (C) Given the profiles that result, is the surface at infinity assumption valid for the two cases?...
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This note was uploaded on 08/23/2011 for the course ECE 6450 taught by Professor Doolittle during the Fall '10 term at University of Florida.
 Fall '10
 Doolittle
 Microelectronics

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