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Unformatted text preview: B.) What is the depth of focus? C.) Discuss the limitations these systems will impose on the planarization of the wafer? (This is a key challenge for process development.) 3.) A photoresist with a contrast of 0.85 at 248 nm is used with a projection system capable of a minimum optical intensity in the areal image (on the wafer) of 25 mW/cm2. A.) What maximum intensity is required of the exposure tool to insure the pattern is transferred to the wafer? B.) If the photoresist requires 400 mJ/cm2 to insure all the resist is removed in developer, what is the minimum exposure time required to insure complete removal of the resist in the developer? C.) What is the maximum exposure time allowed to insure the low intensity (dark fields) of the areal image are not removed in the developer solution....
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This note was uploaded on 08/23/2011 for the course ECE 6450 taught by Professor Doolittle during the Fall '10 term at University of Florida.
- Fall '10