Unformatted text preview: C.) How does this difference in the rate of removal of CO and CF 4 effect the average carbon content in the chamber for the cases where oxygen is not present verses when it is present? D.) What effect does the change in carbon content have on the sidewall polymerization and why (Assume RIE conditions)? E.) What effect does the oxygen have on the anisotropy? 3.) What percentage of gas molecules (assume 3 angstrom molecular diameter) traveling a distance of 50 cm has underwent a randomizing scattering event at 0.5 Pa (sputtering chamber) and at 10-4 Pa (evaporator chamber)? You may use the expression for scattering probability, where n is the number of molecules having been scattered, n o is the total n n e o d = − − 1 λ number of molecules, d is the distance traveled and λ is the mean free path between collisions. 4.) Look over example 12.1 in your book (no need to turn it in)....
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- Fall '10
- Carbon monoxide, plasma etching trends, CF4 plasma process