Homework8 - ECE 6450 Dr. Alan Doolittle Homework #8 Besides...

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ECE 6450 Dr. Alan Doolittle Homework #8 Besides these problems, good example problems (not to be turned in) include 12.2 and 14.3 . 1.) A simple cubic epitaxial material is grown by MBE pseudomorphically strained to a simple cubic substrate as shown in cross section in figure 14-15C. During this process, extra energy is required to force the atoms to arrange in the above configuration. The epitaxial material has a lattice constant that is 1% larger than the substrate. The bond energy per atomic bond is 2.2 eV/bond, about the value found for GaN semiconductors. Assuming that the epitaxial layer has a natural unstrained lattice constant of 2.5 angstroms and the increase in bond energy is linearly dependent on its deviation from its natural bond energy (ie the strained material has a bond energy of 1.01 x 2.2 eV/bond), what is the total amount of stored excess energy in a 0.5 um thick layer on a 4” diameter wafer? For simplicity, you may assume the material distorts the same vertically as it does laterally (normally,
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Homework8 - ECE 6450 Dr. Alan Doolittle Homework #8 Besides...

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