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BC546_547_3 - DISCRETE SEMICONDUCTORS DATA SHEET book...

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DATA SHEET Product specification Supersedes data of 1997 Mar 04 1999 Apr 15 DISCRETE SEMICONDUCTORS BC546; BC547 NPN general purpose transistors book, halfpage M3D186
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1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage 1 3 2 MAM182 3 2 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter BC546 - 80 V BC547 - 50 V V CEO collector-emitter voltage open base BC546 - 65 V BC547 - 45 V V EBO emitter-base voltage open collector BC546 - 6 V BC547 - 6 V I C collector current (DC) - 100 mA I CM peak collector current - 200 mA I BM peak base current - 200 mA P tot total power dissipation T amb 25 ° C; note 1 - 500 mW T stg storage temperature - 65 +150 ° C T j junction temperature - 150 ° C T amb operating ambient temperature - 65 +150 ° C
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1999 Apr 15 3 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS T j = 25 ° C unless otherwise specified. Notes 1. V BEsat decreases by about 1.7 mV/K with increasing temperature. 2. V BE decreases by about 2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 0.25 K/mW SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = 0; V CB = 30 V - - 15 nA I E = 0; V CB = 30 V; T j = 150 ° C - - 5 μ A I EBO emitter cut-off current I C = 0; V EB = 5 V - - 100 nA h FE DC current gain I C = 10 μ A; V CE = 5 V; see Figs 2, 3 and 4 BC546A - 90 - BC546B; BC547B - 150 - BC547C - 270 - DC current gain I C = 2 mA; V CE = 5 V; see Figs 2, 3 and 4 BC546A 110 180 220 BC546B; BC547B 200 290 450 BC547C 420 520 800 BC547 110 - 800 BC546 110 - 450 V CEsat collector-emitter saturation voltage I C = 10 mA; I B = 0.5 mA - 90 250 mV I C = 100 mA; I B = 5 mA - 200 600 mV V BEsat base-emitter saturation voltage I C = 10 mA; I B = 0.5 mA; note 1 - 700 - mV I C = 100 mA; I B = 5 mA; note 1 - 900 - mV V BE base-emitter voltage I C = 2 mA; V CE = 5 V; note 2 580 660 700 mV I C = 10 mA; V CE = 5 V - - 770 mV C c collector capacitance I E = i e = 0; V CB = 10 V; f = 1 MHz - 1.5 - pF
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