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CNY70 - CNY70 Vishay Semiconductors Reflective Optical...

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CNY70 Vishay Semiconductors 1 (7) www.vishay.com Document Number 83751 Rev. A4, 05–Apr–00 Reflective Optical Sensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 950 nm. The detector consists of a phototransistor. Applications Optoelectronic scanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmission sensing). Features Compact construction in center-to-center spacing of 0.1’ No setting required High signal output Low temperature coefficient Detector provided with optical filter C urrent T ransfer R atio (CTR) of typical 5% 94 9320 95 10930 Marking aerea D E Top view Order Instruction Ordering Code Sensing Distance Remarks CNY70 0.3 mm
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CNY70 Vishay Semiconductors www.vishay. 2 (7) Rev. A4, 05–Jun–00 Document Number 83751 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current I F 50 mA Forward surge current t p 10 s I FSM 3 A Power dissipation T amb 25 C P V 100 mW Junction temperature T j 100 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 7 V Collector current I C 50 mA Power dissipation T amb 25 C P V 100 mW Junction temperature T j 100 C Coupler Parameter Test Conditions Symbol Value Unit Total power dissipation T amb 25 C P tot 200 mW Ambient temperature range T amb –55 to +85 C Storage temperature range T stg –55 to +100 C Soldering temperature 2 mm from case, t 5 s T sd 260 C
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CNY70 Vishay Semiconductors 3 (7) www.vishay.com Document Number 83751 Rev. A4, 05–Apr–00
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