tip3055 - TIP3055 NPN SILICON POWER TRANSISTOR Designed for...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
TIP3055 NPN SILICON POWER TRANSISTOR 1 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Designed for Complementary Use with the TIP2955 Series 90 W at 25°C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies when the base-emitter resistance R BE = 100 . 2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = 0.4 A, R BE = 100 , V BE(off) = 0, R S = 0.1 , V CC = 10 V. RATING SYMBOL VALUE UNIT Collector-base voltage (I E = 0) V CBO 100 V Collector-emitter voltage (I B = 0) (see Note 1) V CER 70 V Emitter-base voltage V EBO 7V Continuous collector current I C 15 A Continuous base current I B 7A
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 4

tip3055 - TIP3055 NPN SILICON POWER TRANSISTOR Designed for...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online