Managing Memory‐Chapter #6Amy Hissom Key Terms Bank— An area on the motherboard that contains slots for memory modules (typically labeled bank 0, 1, 2, and 3). Burst EDO (BEDO)— A refined version of EDO memory that significantly improved access time over EDO. BEDO was not widely used because Intel chose not to support it. BEDO memory is stored on 168-pin DIMM modules. COAST (cache on a stick)— Memory modules that hold memory used as a memory cache. See memory cache. CAS Latency (CL)— A feature of memory that reflects the number of clock cycles that pass while data is written to memory. Conventional memory— Memory addresses between 0 and 640K. Also called base memory. C-RIMM (Continuity RIMM) — A placeholder RIMM module that provides continuity so that every RIMM slot is filled. DDR2 SDRAM— Direct Rambus DRAM— A memory technology by Rambus and Intel that uses a narrow, very fast network-type system bus. Memory is stored on a RIMM module. Also called RDRAM or Direct RDRAM. Direct RDRAM— See Direct Rambus DRAM. Disk thrashing— A condition that results when the hard drive is excessively used for virtual memory because RAM is full. It dramatically slows down processing and can cause premature hard drive failure. Double Data Rate SDRAM (DDR SDRAM)— A type of memory technology used on DIMMs that runs at twice the speed of the system clock. Dual Channel – Dynamic RAM (DRAM)— The most common type of system memory, it requires refreshing every few milliseconds. ECC (error-correcting code)— A chip set feature on a motherboard that checks the integrity of data stored on DIMMs or RIMMs and can correct single- bit errors in a byte. More advanced ECC system service, EFS is transparent to users and applications and is difficult to attack. EDO (extended data out)— A type of RAM that may be 10–20 percent faster than conventional RAM because it eliminates the delay before it issues the next memory address.
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