hw3 - UNIVERSITY OF CALIFORNIA College of Engineering...

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 105 Prof. Pister Spring 2011 Homework Assignment #3 Due in the 105 box on the 2 nd floor of Cory, 5pm Friday 2/4/2010 1. [30] " No calculator " questions. You should be able to answer these quickly without using a calculator. a) A junction is doped with N A =1e15 boron atoms per cc, and N D = 1e14 arsenic atoms per cc. Calculate the built-in potential at room temperature. b) In the previous junction, if the doping on one side of the junction is increased by 10x, how does the built-in potential change at room temp? c) In the previous junction running at a particular bias voltage, if the hole current across the junction is 1mA, what is a rough estimate for the electron current? d) if the temperature changes by +/- 30C around room temperature, what is the percentage change in the built- in potential for any semiconductor diode? e) You have a diode with IS = 1e-16.
Background image of page 1
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 08/30/2011 for the course EE 105 taught by Professor King-liu during the Fall '07 term at Berkeley.

Ask a homework question - tutors are online