Review_Ex1 - ECE442 SolidStateDevices&Circuits Review...

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1 Jose E. Schutt Aine ECE 442 ECE 442 Solid State Devices & Circuits Review Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu
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2 Jose E. Schutt Aine ECE 442 Diode Circuits - Rectification sin in VA t ω = Rectification with ripple reduction. C must be large enough so that RC time constant is much larger than period
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3 Jose E. Schutt Aine ECE 442 Find the barrier voltage across the depletion region of a silicon diode at T = 300 K with N D =10 15 /cm 3 and N A =10 18 /cm 3 . 2 ln AD oT i NN VV n ⎛⎞ = ⎜⎟ ⎝⎠ Example Use () 18 15 13 2 20 10 10 10 0.026ln 0.026ln 2.25 1.5 10 oo V ψ == = × 10 3 1 . 51 0/ cm i n 0.026 V T V = @ 300K, 0.026 29.12 0.7571 volts V = =×= 0.7571 volts V = =
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4 Jose E. Schutt Aine ECE 442 Two diodes are connected in series as shown in the figure with I s1 =10 -16 A and I s2 =10 -14 A. If the applied voltage is 1 V, calculate the currents I D1 and I D2 and the voltage across each diode V D1 and V D2 . Example 1 / 11 DT VV DS II e = 2 / 22 e = 12 1 DD T V SD I I e = = 1 2 ln 0.12 S T S I V I ⎛⎞ −= = ⎜⎟ ⎝⎠ 1 + = 2 0.44 V D V = 1 0.56 V D V = 16 0.56/ 0.026 10 0.22 A= D D I eI μ == The diode equations can be written as: from which Using KVL, we get from which and
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5 Jose E. Schutt Aine ECE 442 () μ ⎡⎤ =− ⎣⎦ D ox GS T DS W IC V V V L ( ) ± DS GS T VV V C ox : gate oxide capacitance : electron mobility L : channel length W : channel width V T : threshold voltage MOS – Triode Region - 1 3.9 ε == ox o ox ox ox C tt
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6 Jose E. Schutt
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This note was uploaded on 09/07/2011 for the course ECE 442 taught by Professor Schutt-aine during the Summer '08 term at University of Illinois at Urbana–Champaign.

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Review_Ex1 - ECE442 SolidStateDevices&Circuits Review...

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