hw2_su08_sol - 3.107 (a) Intrinsic silicon. From the Table...

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3.107 (a) Intrinsic silicon. From the Table 3.2 (p. 208 in the Texbook): ρ = 1 q ( p + n ) cm ] μ p = 480 [ cm 2 /V s ] , μ n = 1350 [ cm 2 /V s ] , q = 1 . 6 × 10 - 19 [ C ] , n = p = n i = 1 . 5 × 10 10 [1 /cm 3 ] then ρ = 1 1 . 6 × 10 - 19 [ C ](1 . 5 × 10 10 [1 /cm 3 ] × (480 + 1350)[ cm 2 /V s ]) = 2 . 28 × 10 5 cm ] R = ρ L A [Ω] R = 2 . 28 × 10 5 cm ] × 10 × 10 - 4 [ cm ] 3 × 1 × 10 - 8 [ cm 2 ] = 7 . 6 [ G Ω] (b) n-doped silicon with N D = 10 16 [1 /cm 3 ] μ n = 1200 [ cm 2 /V s ] σ n = n N D [1 / Ω cm ] σ n = 1 . 6 × 10 - 19 [ C ] × 1200 [ cm 2 /V s ] × 10 16 [1 /cm 3 ] = 1 . 92 [1 / Ω cm ] ρ = 1 = 0 . 521 [Ω cm ] R = ρ L A = 0 . 521 [Ω cm ] × 10 × 10 - 4 [ cm ] 3 × 1 × 10 - 8 [ cm 2 ] = 17 . 4 [ k Ω] (c) n-doped silicon with N D = 10 18 [1 /cm 3 ] R 1 N D R = R ( b ) × 10 - 2 = 174 [Ω] (d) p-doped silicon with N A = 10 10 [1 /cm 3 ] ρ = 1 q ( p p 0 μ p + p 0 n ) cm ] p p 0 N A = 10 10 [1 /cm 3 ] , 1
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n p 0 = n
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This note was uploaded on 09/07/2011 for the course ECE 442 taught by Professor Schutt-aine during the Summer '08 term at University of Illinois at Urbana–Champaign.

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hw2_su08_sol - 3.107 (a) Intrinsic silicon. From the Table...

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