Lect_08 - ECE 442 SolidState Devices & Circuits 8. MOS...

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1 Jose E. Schutt Aine ECE 442 ECE 442 Solid State Devices & Circuits 8. MOS Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu
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2 Jose E. Schutt Aine ECE 442 Bias Characteristics – Operation in saturation region – Stable and predictable drain current Biasing of MOS Transistors () 2 1 2 Dn o x G S T W I CV V L μ =−
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3 Jose E. Schutt Aine ECE 442 Two-Supply MOS Bias () 2 1 2 Dn o x G S T W I CV V L μ =− R G provides DC ground at gate and high input resistance to signal source.
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4 Jose E. Schutt Aine ECE 442 Single-Supply MOS Bias – Choose R 1 and R 2 to fix V G – Choose R S and R 2 to fix V S –V GS determines I D – Choose R D to fix V D
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5 Jose E. Schutt Aine ECE 442 Bias with Feedback Resistor GS DS DD D D VVV R I = =− D DG S D D VVR I = + Negative feedback (degeneration) provided by R G
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6 Jose E. Schutt Aine ECE 442 Common Source MOSFET Amplifier Bias is to keep MOS in saturation region
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7 Jose E. Schutt Aine ECE 442 Small-Signal Equivalent Circuit for MOS (device only) Common Source MOSFET Amplifier () 2 ' 1 2 Dn G S T W Ik V V L =− 2 GS GSQ DD m GS eff VV II g = == GS T eff whereV V V −= / m g is proportional to W L = ' 2/ mn D g kW L I = Which leads to
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8 Jose E. Schutt
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This note was uploaded on 09/07/2011 for the course ECE 442 taught by Professor Schutt-aine during the Summer '08 term at University of Illinois at Urbana–Champaign.

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Lect_08 - ECE 442 SolidState Devices & Circuits 8. MOS...

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