Hw2sol

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Unformatted text preview: EE3193/EL5473 & Intro. to VLSI Homework Assignment 2 Solution 1. (Problem 2.1 in text) Consider an nMOS transistor in a 0.6 &m process with W/L = 4/2 º (i.e., 1.2/0.6 &m). In this process, the gate oxide thickness is 100 ¯ and the mobility of electrons is 350 cm 2 /Vs. The threshold voltage is 0.7 V. Plot Ids for Vgs = 0, 1, 2, 3, 4, and 5 V. 2 8 14 / 120 10 100 10 85 . 8 9 . 3 ) 350 ( V A L W L W L W C ox 2. (Problem 2.8 in text) Sometimes the substrate is connected to a voltage called the substrate bias to alter the threshold of the transistors. If the threshold of an nMOS transistor is to be raised, should a positive or negative substrate bias be used? The threshold is increased by applying a negative body voltage so V bs > 0. 3. (Problem 2.14 in text) Peter Pitfall is offering to license to you his patented noninverting buffer circuit shown below. Graphically derive the transfer characteristics for this buffer. ...
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