Lab#4 Report

Lab#4 Report - POLYTECHNIC UNIVERSITY-BROOKLYN Department...

Info iconThis preview shows pages 1–3. Sign up to view the full content.

View Full Document Right Arrow Icon
POLYTECHNIC UNIVERSITY---BROOKLYN Department of Electrical Engineering Experiment 4: Biasing of a Transistor Inverter Stage Date Experiment Performed: Mar. 16, 2007 Date Report Submitted: Mar. 30, 2007 Lab Section: A2
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
POLYTECHNIC UNIVERSITY---BROOKLYN Department of Electrical Engineering Abstract : In order to test and understand the properties and applications of the transistor, several series experiments have been organized. This experiment concentrates on the bipolar junction transistor (in particular, an npn transistor) and its biasing properties as well as its response to changes in temperatures. Subsequent, experiments focus on practical applications of the bipolar junction transistor (BJT) in amplification, waveform shaping and switching; and following, an analysis of the characteristics of field effect transistors. Concerning the properties of the npn BJT, it was observed that changes in temperatures do affect the collector voltage and emitter currents, more so or less so given the emitter load. Additionally, the transistor was seen to yield
Background image of page 2
Image of page 3
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

Page1 / 4

Lab#4 Report - POLYTECHNIC UNIVERSITY-BROOKLYN Department...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online