EE331HW6solutions

# EE331HW6solutions - EE-331 Devices and Circuits 1 Prof R B...

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C oxpp 1.381 10 7 × farad cm 2 = C ox ε ox A T ox := C ox 6.906 10 15 × farad = (c) T ox 10 nm := C oxpp ε ox T ox := C oxpp 3.453 10 7 × farad cm 2 = C ox ε ox A T ox := C ox 1.727 10 14 × farad = (d) T ox 5nm := C oxpp ε ox T ox := C oxpp 6.906 10 7 × farad cm 2 = C ox ε ox A T ox := C ox 3.453 10 14 × farad = Problem 2: Problem 4.4 (a,b,c,d) of Jaeger and Blalock. µ n 500 cm 2 volt 1 sec 1 := ε ox 3.453 10 13 × farad cm 1 = (a) K np µ n ε ox 40 nm := K np 43.2 µ A volt 2 = (b) K np µ n ε ox 20 nm := K np 86.3 µ A volt 2 = (c) K np µ n ε ox 10 nm := K np 172.7 µ A volt 2 = (d) K np µ n ε ox := K np 345.3 µ A volt 2 = EE-331 Devices and Circuits 1 Prof. R. B. Darling Homework # 6 Solutions First, define some useful units and constants: µ m1 0 6 m := eV 1.602 10 19 joule := ms 10 3 sec := µ s1 0 6 sec := q 1.602 10 19 coul := k B 8.62 10 5 eV K 1 := nm 10 9 m := ε rSiO2 3.9 := ε o 8.854 10 14 farad cm 1 := n i 10 10 cm 3 := V T 0.025 volt := ε rSi 11.7 := Problem 1: Problem 4.2 (a,b,c,d) of Jaeger and Blalock. W 5.0 µ m := L 1.0 µ m := AW L := A51 0 8 × cm 2 = ε ox ε o ε rSiO2 := ε ox 3.453 10 13 × farad cm 1 = (a) T ox 50 nm := C oxpp ε ox T ox := C oxpp 6.906 10 8 × farad cm 2 = C ox ε ox A

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EE331HW6solutions - EE-331 Devices and Circuits 1 Prof R B...

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