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C
oxpp
1.381
10
7
−
×
farad cm
2
−
⋅
=
C
ox
ε
ox
A
⋅
T
ox
:=
C
ox
6.906
10
15
−
×
farad
=
(c)
T
ox
10 nm
⋅
:=
C
oxpp
ε
ox
T
ox
:=
C
oxpp
3.453
10
7
−
×
farad cm
2
−
⋅
=
C
ox
ε
ox
A
⋅
T
ox
:=
C
ox
1.727
10
14
−
×
farad
=
(d)
T
ox
5nm
⋅
:=
C
oxpp
ε
ox
T
ox
:=
C
oxpp
6.906
10
7
−
×
farad cm
2
−
⋅
=
C
ox
ε
ox
A
⋅
T
ox
:=
C
ox
3.453
10
14
−
×
farad
=
Problem 2:
Problem 4.4 (a,b,c,d) of Jaeger and Blalock.
µ
n
500 cm
2
⋅
volt
1
−
⋅
sec
1
−
⋅
:=
ε
ox
3.453
10
13
−
×
farad cm
1
−
⋅
=
(a)
K
np
µ
n
ε
ox
40 nm
⋅
⋅
:=
K
np
43.2
µ
A volt
2
−
⋅
=
(b)
K
np
µ
n
ε
ox
20 nm
⋅
⋅
:=
K
np
86.3
µ
A volt
2
−
⋅
=
(c)
K
np
µ
n
ε
ox
10 nm
⋅
⋅
:=
K
np
172.7
µ
A volt
2
−
⋅
=
(d)
K
np
µ
n
ε
ox
⋅
⋅
:=
K
np
345.3
µ
A volt
2
−
⋅
=
EE331 Devices and Circuits 1
Prof. R. B. Darling
Homework # 6 Solutions
First, define some useful units and constants:
µ
m1
0
6
−
m
⋅
:=
eV
1.602 10
19
−
⋅
joule
⋅
:=
ms
10
3
−
sec
⋅
:=
µ
s1
0
6
−
sec
⋅
:=
q
1.602 10
19
−
⋅
coul
⋅
:=
k
B
8.62 10
5
−
⋅
eV
⋅
K
1
−
⋅
:=
nm
10
9
−
m
⋅
:=
ε
rSiO2
3.9
:=
ε
o
8.854 10
14
−
⋅
farad
⋅
cm
1
−
⋅
:=
n
i
10
10
cm
3
−
⋅
:=
V
T
0.025 volt
⋅
:=
ε
rSi
11.7
:=
Problem 1:
Problem 4.2 (a,b,c,d) of Jaeger and Blalock.
W
5.0
µ
m
⋅
:=
L
1.0
µ
m
⋅
:=
AW
L
⋅
:=
A51
0
8
−
×
cm
2
=
ε
ox
ε
o
ε
rSiO2
⋅
:=
ε
ox
3.453
10
13
−
×
farad cm
1
−
⋅
=
(a)
T
ox
50 nm
⋅
:=
C
oxpp
ε
ox
T
ox
:=
C
oxpp
6.906
10
8
−
×
farad cm
2
−
⋅
=
C
ox
ε
ox
A
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 Winter '08
 Taicheng

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