EE331HW4 - EE-331 Devices and Circuits 1 Homework 4 Winter...

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EE-331 Devices and Circuits 1 Homework 4 Winter 2011 Due in class on Wednesday, February 2, 2011. Problem 1: Problem 3.32(a,b) on p. 137 of Jaeger and Blalock. Problem 2: Temperature dependence of a diode’s reverse saturation current. A silicon pn- junction diode is constructed with A = 10 -2 cm 2 , N A = 10 18 cm -3 , and N D = 10 16 cm -3 . Compute the reverse saturation current I S at temperatures of (a) 0ºC, (b) 25ºC, and (c) 50ºC, using accurately calculated values of V T and n i . Use electron and hole diffusion lengths of L n = L p = 5 microns, and assume that these remain constant with temperature. Use appropriate electron and hole mobility values from the graph in Fig. 2.8 of the textbook, and assume that these remain constant with temperature, too. Problem 3: Problem 3.41 on p. 137 of Jaeger and Blalock. Problem 4: Problem 3.47(a,b,c) on p. 138 of Jaeger and Blalock. Problem 5: Problem 3.49 on p. 138 of Jaeger and Blalock. Use V T = 25 mV and n i = 10 10 cm 3 . Problem 6:
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This note was uploaded on 09/10/2011 for the course EE 331 taught by Professor Taicheng during the Winter '08 term at University of Washington.

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