EE331HW3solutions - EE-331 Devices and Circuits 1 Prof. R....

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x po 3.392 10 3 ×µ m = (d) E max 2V bi W do := E max 5.246 10 5 × volt cm 1 = Problem 2: Repeat problem 3.1(a,b,c,d) of Jaeger and Blalock with a forward bias of v D = +0.6 Volts. N A 10 19 cm 3 := N D 10 18 cm 3 := v D 0.6 volt := (c) V bi V T ln N A N D n i 2 := V bi 0.979 volt = The built-in voltage is unchanged. (a) W d 2 ε r ⋅ε o V bi v D () q 1 N A 1 N D + := W d 0.023 µ m = Decreases with forward bias. (b) x n W d 1 N D N A + := x n 0.021 µ m = x p W d 1 N A N D + := x p 2.11 10 3 m = (d) E max bi v D W d := E max 3.263 10 5 × volt cm 1 = Decreases with forward bias. EE-331 Devices and Circuits 1 Prof. R. B. Darling Homework # 3 Solutions First, define some useful units and constants: µ m1 0 6 m := eV 1.602 10 19 joule := k B 8.62 10 5 eV K 1 := q 1.602 10 19 coul := ε o 8.854 10 14 farad cm 1 := Silicon at 300K: n i 10 10 cm 3 := V T 0.025 volt := ε r 11.7 := Problem 1: Problem 3.1(a,b,c,d) of Jaeger and Blalock. N A 10 19 cm 3 := N D 10 18 cm 3 := (c) V bi V T ln N A N D n i 2 := V bi 0.979 volt = Usually easier to computer V bi first.
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This note was uploaded on 09/10/2011 for the course EE 331 taught by Professor Taicheng during the Winter '08 term at University of Washington.

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EE331HW3solutions - EE-331 Devices and Circuits 1 Prof. R....

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