# EE331HW3 - To clarify, the three cases to plot are: (a) I S...

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EE-331 Devices and Circuits 1 Homework 3 Winter 2011 Due in class on Wednesday, January 26, 2011. For each of the problems below, use values of n i = 10 10 cm 3 , V T = 25 mV, and ε r = 11.7 for silicon at a “room” temperature of 300 K. Also note that the built-in voltage, denoted by V bi in lecture, is denoted by φ j in Jaeger and Blalock. Problem 1: Problem 3.1(a,b,c,d) on p. 135 of Jaeger and Blalock. Problem 2: Repeat Problem 3.1(a,b,c,d) on p. 135 of Jaeger and Blalock when the diode has a forward bias of v D = +0.60 Volts. Problem 3: Repeat Problem 3.1(a,b,c,d) on p. 135 of Jaeger and Blalock when the diode has a reverse bias of v D = 10.0 Volts. Problem 4: Problem 3.2(a,b) on p. 135 of Jaeger and Blalock. Problem 5: Problem 3.7(a,b) on p. 135 of Jaeger and Blalock. Problem 6: Problem 3.18(a,b,c) on p. 136 of Jaeger and Blalock.
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Unformatted text preview: To clarify, the three cases to plot are: (a) I S = 10 − 12 A, η = 1; (b) I S = 10 − 12 A, η = 2, and (c) I S = 10 − 14 A, η = 1. First, plot these three diodes on a linear-linear set of axes, similar to that shown in Fig. 3.8. Then, plot these same diodes again on a logarithmic-linear (semi-log) set of axes, similar to that shown in Fig. 3.11. Spend some time to understand clearly why these device characteristics look the way that they do! This is important! Problem 7: Problem 3.21 on p. 136 of Jaeger and Blalock. Problem 8: Problem 3.22(a,b,c,d,e) on p. 136 of Jaeger and Blalock. Problem 9: Problem 3.26(a,b) on p. 136 of Jaeger and Blalock. Problem 10: Problem 3.28 on p. 136 of Jaeger and Blalock....
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## This note was uploaded on 09/10/2011 for the course EE 331 taught by Professor Taicheng during the Winter '08 term at University of Washington.

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