Ceramic Thin Film LTCC barsNorm

Ceramic Thin Film LTCC barsNorm - Deposited(Thin Film...

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Deposited (Thin Film) Technology s Deposited technology depends on the deposit of a thin film by vacuum deposition. The film properties can xhibit conductor, resistor or dielectric exhibit conductor, resistor or dielectric behavior s The films range in thickness from a few nanometers to a micro in thickness s Thin film technology is the basis of IC metallization and can exhibit very fine lines and spaces.
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Schematic Representation of Vacuum Evaporator
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Electron Beam Evaporation Source
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Sputtering s Sputtering occurs by accelerating an ionized inert ion , usually argon, t the target under a high at the target under a high bias. The impact knocks off atoms from the target that deposit on the substrate. Three methods are usually employed: DC, RF and Magnetron sputtering
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DC Sputtering
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Photolithography for Positive and Negative Resists
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Photolithography for Positive and Negative Resists (Cont.)
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Substrate Selection s Thin film substrates must have excellent surface finish, mechanical strength, good thermal conductivity, and excellent dielectric properties (dielectric constant, insulation resistance) s Materials include glass ( poor thermal conductivity and strength), ceramics ( alumina, beryllia, AlN), oxidized silicon , and substrates (including metals) coated with polymers, such as polyimide and BCB
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Properties of Thin Film Substrate Materials
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Thin film Metal Conductors
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Conductors s Many good conductors exhibit poor adhesion. Use of an adhesion layer such as Ti, Ti-W, Cr, Cr-Cu or NiCr onductors include Al, Au ( as Cr u, Ti d s Conductors include Al, Au ( as Cr-Au, Ti-Pd- Au, TiW-Au), Cu ( with Cr or Cr-Cu) s Patterns defines by subtractive chemical etching or additive plating. Multilayer metallizations must have etch compatibility
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Nichrome Resistor Selective Etch Subtractive Thin Film Process a) starting substrate with three layer deposit b) After gold etch c)After nickel barrier etch d) After nichrome resistor etch
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Thin Film Resistors Sheet resistivities are fixed for a given resistor material Typical values are from 50 /sq for TaN or nichrome to 1000 /sq for complex silicides TCR’s are fixed by the material but are low ( ›50 ppm / o C) Since sheet resistivities are fixed, need a large number of squares for high value resistors, Often use serpentine patterns
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Multilayer Dielectrics s The major development in thin films was the introduction of polymer dielectric layers, based on polyimide, BCB, or other organic formulations which allowed multilayer fabrication and blind via generation s These films could be patterned by wet chemical etch, dry plasma etch, and laser ablation , either by point ablation of area ablation through a metal mask.
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Chemistry of PMDA-ODA Polyimide
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Typical Polyimide Dry etch 1) Deposit Polyimide 2) Deposit mask 3,4) Pattern mask 5) Plasma etch, barrel or reactive ion etch
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Plated-up Via Holes for Multilayer Thin Film 1)Define via hole,(2) plate via hole with metal,(3) sputter adhesion layer(Cr/Cu),(4)apply photoresist and pattern,(5) electroplate Cu, (6)remove photoresist and etch flash, plate with Ni
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Via fabricated by scanning laser ablation through a metal mask Before mask removal After mask removal
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This note was uploaded on 09/15/2011 for the course EML 5562 taught by Professor Staff during the Summer '11 term at FIU.

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Ceramic Thin Film LTCC barsNorm - Deposited(Thin Film...

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