EE 230 Lab 7

EE 230 Lab 7 - .3mA EE 230 Lab 7 Electronic Circuits and Systems Brent Cornelius Introduction The purpose of this Lab is to investigaterd the use

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.3mA EE 230 Lab 7 Electronic Circuits and Systems Brent Cornelius
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Introduction: The purpose of this Lab is to investigaterd the use of MOSFETS in basic circuits. The MOSFET is used both in the triode region as a voltage controlled resistor and in the saturation region as an amplifier. The first part of the lab you will be viewing the I-V characteristics of MOSFET. Check your measurements with the datasheet and see how they compare. Part 2 is analyzing a MOSFET Amplifier. Using your measurements compare your theoretical and PSpics simulated results. Part 3 involves a Voltage Controlled Amplifier once you’re done setting up the circuit compare your results with PSpice circuit. Part 1: I-V Characteristics of MOSFET Y = mx +b (0.080815 – 0.033466) / (5-3) * m = .0236745 .058017 = .0236745*4 + b b = -.036681 0 = .0236745*x + (-.036681) k’(W/L) =>x intercept = 1.55 Our data from running the circuit simulation is attached on the back, here is the graph we got which looks exactly like what we did in class: Part 2: Analyze a MOSFET Amplifier
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This note was uploaded on 09/18/2011 for the course EE 230 taught by Professor Mina during the Spring '08 term at Iowa State.

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EE 230 Lab 7 - .3mA EE 230 Lab 7 Electronic Circuits and Systems Brent Cornelius Introduction The purpose of this Lab is to investigaterd the use

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