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Unformatted text preview: Gary Ingram HW #1 MFGE 4394 1.3) The atom radius of copper is R=0.1278nm. Its crystal structure has facecentered cubic cells.
(a) What is the crystallattice constant?
(b) What is the concentration of copper atoms?
(c) What is the atomic volume (the volume of 1 mol of copper)? @ Lirfﬁﬁ ‘MLJ qr HLIZVSM‘) © Name Uohiwxc : p‘ u
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a“ 3 ‘ (3M5 Fo\ k) '. to 9m .m = 8N: M“ 1.28) The concentration of thermally generated electrons in Ntype silicon increases with temperature.
At certain temperature, it is equal to the concentration of the dopinginduced electrons (the concentration of the thermally induced electrons is no longer negligible).
(3) If the doping level is ND=10”cm'3, what is the concentration of holes? (b) What is the intrinsic concentration (n,) at this temperature? V i'.» “‘5 C9 “ :h}
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(this means that these electrons need to gain energy to liberate themselves from the solid). Determine
and plot the Ek dependence for an electron in a ﬁeld of constant potential energy Ema105W. For
plotting, use values for k between 10"’m" and 10mm". 1 1M
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mom: ’* Lno "" B 2.31) Find the roomtemperature position of the Fermi level with respect to the top of the valence band
for Ntype silicon doped with No=10"cm" donor atoms. It is closer to the top of the valence band, or to
the bottom of the conduction band? EL'ES = :1 \V\ knL/”‘\ " l“htuvm
: 5.511\o°(2.°~s.\5\ he K 5 /\0“\) Gary Ingram HW #1 MFGE 4394 10.3) The concentration proﬁle of drivein diffusion is (D
N(x.t) = mew (”2/4139 What deposition dose (CD) and drivein time (t) are needed to obtain a layer with surface concentration
N55x101‘cm‘3 and junction depth x,=2um? The doping element in phosphorus which is being diffused
into a Ptype wafer with uniform concentration NA=1015cm'3. The drive in temperature is T=1100°C. '3'754.g,¢z ; *5 it (373} — u. ~_3 ’5‘!“ _
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tolerance, if the nominal drivein temperature is T=1050°C. Express the results as a percentage. The doping element is
(a) Phosphorus (EA=3.75eV)
(b) Arsenic (EA=3.909V) ® E“; 3.75 cu 5.‘I~'>' ’KLl313J5) D3113 c.
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 Spring '11
 Larson

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