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IngramGaryMFGE4394Homework1

IngramGaryMFGE4394Homework1 - Gary Ingram HW#1 MFGE 4394...

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Unformatted text preview: Gary Ingram HW #1 MFGE 4394 1.3) The atom radius of copper is R=0.1278nm. Its crystal structure has face-centered cubic cells. (a) What is the crystal-lattice constant? (b) What is the concentration of copper atoms? (c) What is the atomic volume (the volume of 1 mol of copper)? @ Lirfﬁﬁ ‘MLJ qr HLIZVSM‘) © Name Uohiwxc : p‘ u 0v. ‘f” 3 l a ' L‘°l\ 1‘01) akh) C l - ﬂ : olsb‘SU‘W‘ e‘L‘L“o?z¢Jﬁ-> ( ’f ‘- 1.‘\ (lew--\ k by ICC, “L10”; 5 L1 __..—-’" u H .——- - —-—— . 3 a“ 3 ‘ (3M5 Fo\ k) '. to 9m .m = 8N: M“ 1.28) The concentration of thermally generated electrons in N-type silicon increases with temperature. At certain temperature, it is equal to the concentration of the doping-induced electrons (the concentration of the thermally induced electrons is no longer negligible). (3) If the doping level is ND=10”cm'3, what is the concentration of holes? (b) What is the intrinsic concentration (n,-) at this temperature? V i'.» “‘5 C9 “ :h} (A) Idea )0 c Q ‘— If; N" -_-_-.-’3r—j7 iO I° : m H“ J F ,J M-.. ,lv-F- \ IS a; " l‘ )0 (M Gary Ingram HW #1 MFGE 4394 2.4) Electrons in solids have negative potential energies with respect to the energy of a free electron (this means that these electrons need to gain energy to liberate themselves from the solid). Determine and plot the E-k dependence for an electron in a ﬁeld of constant potential energy Ema-105W. For plotting, use values for k between -10"’m" and 10mm". 1 1M - S .4 ‘11 :0 r' P 2 7“ 'L M V ix -. we v N r '1. 2” \AJ ‘0 .I mom: ’* Lno "" B 2.31) Find the room-temperature position of the Fermi level with respect to the top of the valence band for N-type silicon doped with No=10"cm" donor atoms. It is closer to the top of the valence band, or to the bottom of the conduction band? EL'ES = :1 \V\ knL/”‘\ " l-“htuvm : 5.511\o°(2.°~s.\5\ he K 5 /\0“\) Gary Ingram HW #1 MFGE 4394 10.3) The concentration proﬁle of drive-in diffusion is (D N(x.t) = mew (”2/4139 What deposition dose (CD) and drive-in time (t) are needed to obtain a layer with surface concentration N55x101‘cm‘3 and junction depth x,=2um? The doping element in phosphorus which is being diffused into a P-type wafer with uniform concentration NA=1015cm'3. The drive in temperature is T=1100°C. '3'754.g,¢z ; *5 it (373} — u. ~_3 ’5‘!“ _ “is: d— “o N" 0: Do 6 : (3153‘) c. ‘t l '1” (M 15 (XL :- 2’MM :e-78 X\O 5' -3 Mk : MB: io' an A: ‘6 r 0 109* - 'D 45:20 ' 1‘15 (I 7’ :vroo’c =’ ’373 'C egﬂ-L“: in E3: 3.75 c“, g‘m «{QPK (vc‘ L!0\\ 2; 1:; 5.3 Do 1 3.%6 EM {5 I \‘ " LQp‘N—Q L\ 3_S (3-79 (0-4“ .Uo.’ 9w 102° i: Iii/(421w? - I ( X K 3 11 ‘1‘19. 2:: frt Page in: i Gary Ingram HW #1 MFGE 4394 10.6) The temperature variation of a drive-in diffusion furnace is 10.1%. Determine the junction depth tolerance, if the nominal drive-in temperature is T=1050°C. Express the results as a percentage. The doping element is (a) Phosphorus (EA=3.75eV) (b) Arsenic (EA=3.909V) ® E“; 3.75 cu -5.‘I~'>' ’KLl313J5) D3113 c. on - p5 “Fl rflqmﬂ \ IL I} ‘ an£ln \$.55“ an R >- :2"! tb‘jrv. cxp(CA/n\ \ - V .l- 2:23 -. when rs 'Eﬁ .l 61! E: I'm _ '3': 2B0 K‘fLC’ 1 1 a {L 353 ‘_ (1795 T "> (9 an L Raucwq ——‘ r 1 m 7‘) ’3.¢I 1'" (ISLISK’IK\ WW 9111.7! 6° } ”7} iii—p.) : [,1 1’6 -EAI:T Q: 90 Cr g): -13 T éx, _ an AD d1: AD 4T 0.3 lax“ MK ...
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