Homework_6_Solution

Homework_6_Solution - Dr. Byoung Hee You 5. Show...

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Dr. Byoung Hee You TECH 4392, MFGE 4392, and TECH 5392 Solutions: Homework#6 1. Draw and explain the atomic structure for silicon dioxide. Ans) A silicon dioxide has a form of a silicon atom surrounded by four oxygen atoms as following, 2. Describe how SiO 2 can be used as a dopant barrier. Ans) SiO 2 is an effective barrier to selectively introduce dopants into the silicon surface as following,
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Dr. Byoung Hee You 3. State the consumption of silicon during oxidation. Ans) 1000 Å 460 Å of Si is consumed 4. Describe rate of oxide growth using Fig. 10.12. Ans) There are two growth stages including the linear stage and parabolic state
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Unformatted text preview: Dr. Byoung Hee You 5. Show LOCOS(Local Oxidation of Silicon) process. Ans) LOCOS process is to electrically isolate adjacent devices on the silicon wafer. 6. What is Birds Beak Effect in Locos Process. Ans) Dr. Byoung Hee You 7. Show Shallow Trench Isolation (STI) Oxide Liner. Ans) 8. The main advantages of a rapid thermal processor Ans) 1. Reduced thermal budget 2. Minimized dopant movement in the silicon 3. Ease of clustering multiple tools 4. Reduced contamination due to cold wall heating 5. Cleaner ambient because of the smaller chamber volume 6. Shorter time to process a wafer (referred to as cycle time)...
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This note was uploaded on 09/21/2011 for the course MFGE 4392 taught by Professor You during the Spring '11 term at Texas State.

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Homework_6_Solution - Dr. Byoung Hee You 5. Show...

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