Homework09 - adjacent impurity atoms occur This overlap...

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Homework # 9 (due Thursday, 14 April) 1. Compute the concentration of electrons and holes in an intrinsic semiconductor InSb at room temperature (E g =0.2eV, m e = 0.01 m and m h = 0.018 m ). Determine the position of the Fermi energy. 2. Indium antimonide has E g = 0.23 eV; dielectric constant ε = 18; electron effective mass m e = 0.015 m . Calculate the donor ionization energy and the radius of the ground state orbit. At what minimum donor concentration will appreciable overlap effects between the orbits of
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Unformatted text preview: adjacent impurity atoms occur? This overlap tends to produce an impurity band - a band of energy levels which permit conductivity presumably by a hopping mechanism in which electrons move from one impurity site to a neighboring ionized impurity site. 3. Given the data for Si: µ e = 1350 cm 2 /V ⋅ s, h = 475 cm 2 /V ⋅ s, m e = 0.19 m , m h = 0.16 m and E g = 1.1 eV, calculate a) The lifetimes of electrons and holes. b) The intrinsic conductivity σ at room temperature....
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This note was uploaded on 09/21/2011 for the course PHYSICS 101 taught by Professor Wormer during the Spring '08 term at Aarhus Universitet.

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