EE4353_Lecture_6_CMOS_Scaling

EE4353_Lecture_6_CMOS_Scaling - EE 4353 Lecture 6 CMOS...

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Unformatted text preview: EE 4353 Lecture 6 CMOS Scaling Rules and Advanced Technologies Overview Professor Hsing-Huang Tseng Sep. 14, 2011 Homework #1 Fundamental of Modern VLSI Devices, by Taur/Ning 3.6 4.1 4.3 4.4 5.1 5.3 5.4 DUE DATE: September 28, 2011 PLACE: Classroom Semiconductor Products Sector Circuit Design Device Technology Manufacturing CAD Device Integration Process Development Unit processes Clarify the Capacitances in MOSFETs and in CMOS Invertors Drain current in the sub-threshold region I dst ~ 100 (W/L) 10 (VgVt)/S I off is the Idst measured under V g =0, and V d = V dd I off = 100 (W/L) 10 V t /S = [100 (W/L)] / [10 V t /S ] Saturation drain current I dsat = (1/2) (W/L) m ns Cox (Vg-Vt) 2 I on = max Idsat measured under V g = V d =V dd I on = (1/2) (W/L) m ns C ox (V dd-V t ) 2 As V t decreases , I on increases, but I off also increases. Need to slow down V t scaling increases m s and C ox Impact of V t on MOSFET I on and I off I off Ion onN dd onP dd d I CV delay down pull I CV delay up pull delay up pull delay down pull 2 2 ) ( 2 1 ) 1 1 ( 4 onP onN dd d I I CV Q: How can the speed of an inverter circuit be improved? Inverter Speed - Impact of I on V out V in V dd Cox Taur/Ning p. 263 Load capacitor f CV k current average V P dd dd dynamic 2 Power Consumption off dd static I V P Total power consumption static dynamic P P P V out V in V dd Energy = Q x V dd = (CxV dd ) xV dd = C xV dd 2 Power= Energy/time = C xV dd 2 x f Taur/Ning p. 265 Load capacitor More on CMOS Switching Time CMOS (Complementary MOS) Inverter...
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EE4353_Lecture_6_CMOS_Scaling - EE 4353 Lecture 6 CMOS...

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