EE4353_Lecture_8_Shallowjunction_Salicide

EE4353_Lecture_8_Shallowjunction_Salicide - EE 4353 Lecture...

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EE 4353 Lecture 8 Source/Drain Module Shallow Junction Salicide Technology Professor Hsing-Huang Tseng Sep. 19, 2011
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Announcement Class on Oct. 17 (Monday) is rescheduled to Oct. 21 (Friday) at 12:30 pm.
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USJs Formation USJ Doping Annealing Plasma doping Molecular Implantation Laser
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Review last lecture on USJ Ion implantation is the most popular method to control the dopant profile in the Si substrate USJ is formed by ultra-low energy implant To repair the implantation-induced damage post II annealing is required Need high annealing temperature to repair the damage and activate the dopants Need short annealing time to minimize the dopant diffusion during the USJ formation Flash annealing is the most promising one
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Practical Challenges of Shallow Junction Formation
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Transient Enhanced Diffusion (TED)
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TED The diffusion (therefore the diffusivity) is enhanced in the implanted-induced damaged region Total D T = D i + D t Transient denotes the enhancement of
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This note was uploaded on 09/22/2011 for the course EE 4353 taught by Professor Tseng during the Spring '11 term at Texas State.

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EE4353_Lecture_8_Shallowjunction_Salicide - EE 4353 Lecture...

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