Elec3908RevP2F09 - Short channel effects can be mitigated...

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Need to integrate over x and z Left hand side is just the total channel current and the current density is uniform in z so If we also assume constant mobility and constant field in x direction then The remaining integration represents the mobile charge density under the gate
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But this is only valid until pinchoff when the mobile charge = 0.
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For low V DS and V SB > 0 For saturated V DS and V SB = 0 For low V DS and V SB = 0
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The threshold voltage decreases with decreasing L since the source and drain control a larger fraction of charge. The threshold voltage decreases with increasing V DB since the drain controls a larger fraction of charge.
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Unformatted text preview: Short channel effects can be mitigated somewhat by increasing the substrate doping and/or by reducing the source/drain junction depths. (saturated operation) There are equivalent equations for operation in triode mode. There can be: As well as any number of other variations over a wafer, from wafer to wafer or from batch to batch. Although devices used to be packaged before high frequency testing this can now be done on wafer to a large extent. One of the greatest costs of reliability related field failures is the damage to the suppliers reputation. GOOD LUCK ON THE FINAL EXAM!!!...
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This note was uploaded on 09/27/2011 for the course ENGINEERIN 3600 taught by Professor Victor during the Spring '11 term at Carleton CA.

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Elec3908RevP2F09 - Short channel effects can be mitigated...

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