{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

Final_Practice_Problems_F09

# Final_Practice_Problems_F09 - Name Student Number ELEC 3908...

This preview shows pages 1–5. Sign up to view the full content.

Name:___________________ Student Number:___________________ ELEC 3908 – Physical Electronics Final Practice Problem Set ? Minutes December 1, 2009 - No aids except a non-programmable calculator - All questions must be answered - All questions have equal weight - Answer questions on quiz sheets (use backs if necessary) - Write your student number at the top of each page

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Student #:_____________________ 2 1. The cross section of a simple substrate MOSFET structure is illustrated below. a) How many patterning steps are required to make the structure above? b) How many additional steps would be needed if we wanted to fabricate a p -channel device on a p -type substrate? c) What is the difference between "drawn channel length" and "effective channel length"? d) Why is the gate oxide grown using "dry" oxidation rather than "wet" oxidation? .
Student #:_____________________ 3 2. The cross section of a simple substrate n -channel MOSFET biased above threshold is illustrated below. a) What is meant by "inversion" in a MOSFET and how does it form a conductive channel? b) Redraw the diagram above illustrating how the channel region is changed at pinch-off, when V DS > V DSsat ? c) A gate bias is applied that causes the MOSFET channel to have a uniform induced carrier density of n = 5 x 10 17 cm -3 and thickness of 0.2 μm. For an effective channel length of 2 μm and width of 10 μm, what is the channel current, I D , for V DS = 1.5V ?

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Student #:_____________________ 4 3. There are three voltage components in the equation used to calculate the threshold voltage, V T , for MOSFET. (a) Briefly describe where each component comes from. (b) If the work function for intrinsic silicon ( E F = E i = E g /2) is , what is the work function if N A = 10 17 /cm 3 ? ( T = 300 K).
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 15

Final_Practice_Problems_F09 - Name Student Number ELEC 3908...

This preview shows document pages 1 - 5. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online