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Lecture 26 BB 7.1 MOSDiffAmpRevised

# Lecture 26 BB 7.1 MOSDiffAmpRevised - EE 311 Lecture 26...

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EE 311 Lecture 26 Part 1 Wednesday March 17, 2010 7.1 MOS Differential Amplifier Zubair Rehman

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2 Review 5.2 I-V Characteristics of Enhancement n-MOSFET V t = Threshold Voltage If v GS < V t , then i D = 0 If v GS > V t , then i D > 0 Triode Region v DS < v GS – V t = V OV i D = K n ’* ( W / L ) [(v GS - V t )v DS - 1 / 2 v DS 2 ] Saturation Region v DS > v GS – V t = V OV i D = i Dsat = 1 / 2 K n ’* ( W / L ) [(v GS - V t )] 2 = 1 / 2 K n ’* ( W / L ) V OV 2
3 Let 1 / 2 K n ’( W / L ) = 1 mA & V t = 1 If v GS ≤ V t = 1, i D = 0 If v GS = 2 V, v GS - V t = 1 V & i DSAT = 1 mA If v GS = 3 V, v GS - V t = 2 V & i DSAT = 4 mA If v GS = 4 V, v GS - V t = 3 V & i DSAT = 9 mA If v GS = 5 V, v GS - V t = 4 V & i DSAT = 16 mA

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4 g m = Transconductance In Saturation t cons V GS D ds V i tan = = t GS DSAT m t GS t GS n t GS n DSAT m t GS n t GS n GS m t GS n DSAT V V I g V v V v L W K V v L W K I g V v L W K V v L W K v g V v L W K i - = - = - - = - = - = - = 2 2 ) ( 2 1 ) ( 2 1 2 ) ( 2 1 * 2 ) ( 2 1 ) ( 2 1 2 2 2 when evaluated at v GS = V GS
5 Early Voltage V A & λ = 1/V A

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6 The MOSFET as an Amplifier v out = -g m v gs * [r o || R C ]
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