11_02_486_492 (1).doc - 486 V JE\u0158\u00c1BEK I H\u00dcTTELA SURNAME C SECONDNAME THEORETICAL MODEL OF THE BISTABLE SEMICONDUCTOR LASER DIODE BASED \u2026EXEMPLARY

11_02_486_492 (1).doc - 486 V JEŘÁBEK I HÜTTELA SURNAME...

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486 V. JEŘÁBEK, I. HÜTTEL A. SURNAME, C. SECONDNAME , THEORETICAL MODEL OF THE BISTABLE SEMICONDUCTOR LASER DIODE BASED … EXEMPLARY DOCUMENT FOR THE PAPER IN RADIOENGINEERING Theoretical Model of the Bistable Semiconductor Laser Diode Based on the Rate Equations Vítězslav JEŘÁBEK 1 , Ivan HÜTTEL 2 a 1 Department of Microelectronics, CTU FEE, Technicka 2, 166 27, Prague 6, Czech Republic 2 Institute of Chemical Technology, Technicka 5, 166 28, Prague 6, Czech Republic [email protected], [email protected]
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487 V. JEŘÁBEK, I. HÜTTELA. SURNAME, C. SECONDNAME, THEORETICAL MODEL OF THE BISTABLE SEMICONDUCTOR LASER DIODE BASED …EXEMPLARY DOCUMENT FOR THE PAPER IN RADIOENGINEERING Abstract. The paper describes theoretical and experimen - tal results that enabled the authors to proof optical bista - bility behavior of a specially modified bistable semicon - ductor laser diode (BLD) created on a structure with a a saturable absorption section. A mathematical model of the light-current characteristic, condition for bistability and the basic parameters of the hysteresis loop were de - rived by solving a system of three rate equations. That system was used for simulation of the light-current char - acteristic and conditions of bistability of the realized BLDs. For selected operating points of the simulated light-current characteristic the parameters of hysteresis loop and element values of the BLD electrical equivalent circuit for small signal variations were calculated. The bistability was experimentally measured by the new time method devised for impulse bistability verification (IBV). The basic measured and calculated parameters of the hysteresis loop of the BLD light-current characteristic were compared. Keywords Optical bistability, bistable semiconductor laser diode, rate equation. 1. Introduction Recently, in the realm of integrated optoelectronics appear devices exploiting new principles. One of them is the bistable semiconductor laser diode (BLD), utilizing the effect of absorption-based optical bistability. Optical bistability is one of the effects that were first forecast and only later observed. Lasher attracted attention to optical bistability in 1964 [1] and it was confirmed experimentally by Basov in 1968 [2]. The absorption-based optical bistability of the mul - tisection laser diode (LD) belongs to the nonlinear dynamic optical phenomena in LD radiation that are based on Q switching [3]. This physical mechanism is a result of nonlinear dependence of the absorption and gain coeffi - cients of the absorbing and gain region of the divided ac - tive layer of the semiconductor LD and manifests itself in the LD radiation as self-pulsations or optical bistability. A A few years ago several papers were published describing the origin of bistability in LDs comprising a double heterostructure that was purposefully modified by dividing the stripe contact for achieving the bistable mode. The papers differed in semiconductor types, ways of strip contact splitting and also according to physical mechanism of bistability [4], [5] and [7].
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  • Bistability, Bistable Semiconductor Laser, bistability Bistability

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